onsemi MUN5111T1G Transistor, -100 mA PNP, -50 V, 3-Pin SOT-323
- RS庫存編號:
- 184-1206
- 製造零件編號:
- MUN5111T1G
- 製造商:
- onsemi
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可享批量折扣
查看批量定價選項小計（250 件, 每袋250個）*
TWD500.00
(不含稅)
TWD525.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年9月20日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 250 - 500 | TWD2.00 | TWD500.00 |
| 750 - 1250 | TWD1.90 | TWD475.00 |
| 1500 + | TWD1.90 | TWD475.00 |
* 參考價格
替代產品
該產品我們目前不提供。 這是我們推薦的替代產品。
個 (在毎卷：3000)
TWD2,700.00
(不含稅)
TWD2,835.00
(含稅)
- RS庫存編號:
- 184-1206
- 製造零件編號:
- MUN5111T1G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -100mA | |
| Maximum Collector Emitter Voltage Vceo | -50V | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 50V | |
| Maximum Power Dissipation Pd | 310mW | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 35 | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 2.2mm | |
| Series | MUN5111T1G | |
| Width | 1.35mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -100mA | ||
Maximum Collector Emitter Voltage Vceo -50V | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 50V | ||
Maximum Power Dissipation Pd 310mW | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 35 | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 2.2mm | ||
Series MUN5111T1G | ||
Width 1.35mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are PbFree, Halogen Free/BFR Free
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