onsemi NJL1302DG Transistor, -25 A PNP, -260 V, 5-Pin TO-264
- RS庫存編號:
- 184-1049
- 製造零件編號:
- NJL1302DG
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（25 件, 每管25個）*
TWD3,937.50
(不含稅)
TWD4,134.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 75 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 25 - 25 | TWD157.50 | TWD3,937.50 |
| 50 - 75 | TWD154.10 | TWD3,852.50 |
| 100 + | TWD151.00 | TWD3,775.00 |
* 參考價格
- RS庫存編號:
- 184-1049
- 製造零件編號:
- NJL1302DG
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -25A | |
| Maximum Collector Emitter Voltage Vceo | -260V | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 260V | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 45 | |
| Minimum Operating Temperature | -65°C | |
| Maximum Transition Frequency ft | 1MHz | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Maximum Power Dissipation Pd | 200W | |
| Pin Count | 5 | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.18mm | |
| Standards/Approvals | No | |
| Length | 20.02mm | |
| Height | 46.79mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -25A | ||
Maximum Collector Emitter Voltage Vceo -260V | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 260V | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 45 | ||
Minimum Operating Temperature -65°C | ||
Maximum Transition Frequency ft 1MHz | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Maximum Power Dissipation Pd 200W | ||
Pin Count 5 | ||
Maximum Operating Temperature 150°C | ||
Width 5.18mm | ||
Standards/Approvals No | ||
Length 20.02mm | ||
Height 46.79mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- KR
The Bipolar Power Transistor has been designed to eliminate thermal equilibrium LAG time and bias trimming in audio amplifier applications. It can also be used in other applications as a transistor die protection device.
Thermally matched bias diode to eliminate thermal runaway
Instant thermal bias tracking for superior sound quality
Absolute Thermal Integrity
High safe operating area
Pb-Free Packages are Available
Applications:
High-fidelity consumer audio products
Professional audio amplifiers
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