onsemi MUN5313DW1T1G Digital Transistor, 50 V NPN + PNP 100 mA Surface SOT-363, 6-Pin
- RS庫存編號:
- 184-1034
- 製造零件編號:
- MUN5313DW1T1G
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（3000 件, 每卷3000個）*
TWD4,200.00
(不含稅)
TWD4,410.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年9月27日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD1.40 | TWD4,200.00 |
| 6000 - 9000 | TWD1.40 | TWD4,200.00 |
| 12000 + | TWD1.40 | TWD4,200.00 |
* 參考價格
- RS庫存編號:
- 184-1034
- 製造零件編號:
- MUN5313DW1T1G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Digital Transistor | |
| Package Type | SOT-363 | |
| Maximum Collector Emitter Voltage Vceo | 50V | |
| Mount Type | Surface | |
| Transistor Configuration | Dual | |
| Maximum Collector Base Voltage VCBO | 50V | |
| Maximum Continuous Collector Current Ic | 100mA | |
| Transistor Polarity | NPN + PNP | |
| Minimum DC Current Gain hFE | 80 | |
| Maximum Power Dissipation Pd | 385mW | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 0.25V | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 6 | |
| Standards/Approvals | RoHS, Pb-Free | |
| Height | 1.1mm | |
| Length | 2.2mm | |
| Width | 1.35mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Digital Transistor | ||
Package Type SOT-363 | ||
Maximum Collector Emitter Voltage Vceo 50V | ||
Mount Type Surface | ||
Transistor Configuration Dual | ||
Maximum Collector Base Voltage VCBO 50V | ||
Maximum Continuous Collector Current Ic 100mA | ||
Transistor Polarity NPN + PNP | ||
Minimum DC Current Gain hFE 80 | ||
Maximum Power Dissipation Pd 385mW | ||
Maximum Collector Emitter Saturation Voltage VceSAT 0.25V | ||
Maximum Operating Temperature 150°C | ||
Pin Count 6 | ||
Standards/Approvals RoHS, Pb-Free | ||
Height 1.1mm | ||
Length 2.2mm | ||
Width 1.35mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are PbFree, Halogen Free/BFR Free
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