onsemi Transistor, -15 A PNP, -230 V, 3-Pin TO-247
- RS庫存編號:
- 184-0975
- 製造零件編號:
- MJW1302AG
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 30 件）*
TWD2,892.00
(不含稅)
TWD3,036.60
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 30 件從 2027年1月06日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD96.40 | TWD2,892.00 |
| 60 - 90 | TWD94.30 | TWD2,829.00 |
| 120 + | TWD92.40 | TWD2,772.00 |
* 參考價格
- RS庫存編號:
- 184-0975
- 製造零件編號:
- MJW1302AG
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -15A | |
| Maximum Collector Emitter Voltage Vceo | -230V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 230V | |
| Maximum Transition Frequency ft | 1MHz | |
| Minimum Operating Temperature | -65°C | |
| Transistor Polarity | PNP | |
| Maximum Power Dissipation Pd | 200W | |
| Minimum DC Current Gain hFE | 12 | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.26mm | |
| Width | 5.3mm | |
| Standards/Approvals | No | |
| Height | 41.91mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -15A | ||
Maximum Collector Emitter Voltage Vceo -230V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 230V | ||
Maximum Transition Frequency ft 1MHz | ||
Minimum Operating Temperature -65°C | ||
Transistor Polarity PNP | ||
Maximum Power Dissipation Pd 200W | ||
Minimum DC Current Gain hFE 12 | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 16.26mm | ||
Width 5.3mm | ||
Standards/Approvals No | ||
Height 41.91mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The MJW3281A Bipolar Complementary Audio Power Transistor is a power transistor for high power audio, disk head positioners and other linear applications.
Designed for 100 W Audio Frequency
Gain Complementary: Gain Linearity from 100 mA to 7 A
hFE = 45 (Min) @ IC = 8 A
Low Harmonic Distortion
High Safe Operation Area - 1 A/100 V @ 1 Second
High fT - 30 MHz Typical
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