Infineon BFP840FESDH6327XTSA1 Transistor, 35 mA NPN, 2.25 V, 4-Pin TSFP

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包裝方式：
RS庫存編號:
170-2364
製造零件編號:
BFP840FESDH6327XTSA1
製造商:
Infineon
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品牌

Infineon

Product Type

Transistor

Maximum DC Collector Current Idc

35mA

Maximum Collector Emitter Voltage Vceo

2.25V

Package Type

TSFP

Mount Type

Surface

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

2.9V

Transistor Polarity

NPN

Minimum DC Current Gain hFE

150

Maximum Power Dissipation Pd

75mW

Maximum Transition Frequency ft

85GHz

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Pin Count

4

Height

0.55mm

Length

1.4mm

Series

BFP840FESD

Standards/Approvals

No

Automotive Standard

No

The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP840FESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the WiFi application.

Robust high performance low noise amplifier based on Infineon's reliable, high volume SiGe:C wafer technology

2 kV ESD robustness (HBM) due to integrated protection circuits

High maximum RF input power of 21 dBm

0.6 dB minimum noise

26 dB maximum gain

23.5 dBm OIP3 typical at 5.5 GHz, 25 mA

Accurate SPICE GP model available to enable effective design in process

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