onsemi Transistor, -3 A PNP, -60 V, 4-Pin SOT-223
- RS庫存編號:
- 166-2841
- 製造零件編號:
- NZT660
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 4000 件）*
TWD26,800.00
(不含稅)
TWD28,160.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年9月03日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 4000 - 4000 | TWD6.70 | TWD26,800.00 |
| 8000 + | TWD6.40 | TWD25,600.00 |
* 參考價格
- RS庫存編號:
- 166-2841
- 製造零件編號:
- NZT660
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -3A | |
| Maximum Collector Emitter Voltage Vceo | -60V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | -80V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 100MHz | |
| Maximum Power Dissipation Pd | 2W | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 80 | |
| Maximum Emitter Base Voltage VEBO | -5V | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7mm | |
| Height | 1.8mm | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -3A | ||
Maximum Collector Emitter Voltage Vceo -60V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO -80V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 100MHz | ||
Maximum Power Dissipation Pd 2W | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 80 | ||
Maximum Emitter Base Voltage VEBO -5V | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Width 3.7mm | ||
Height 1.8mm | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Automotive Standard No | ||
Small Signal PNP Transistors, 60 to 160V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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