Nexperia PMBTA42,185 Transistor, 100 mA NPN, 300 V, 3-Pin SOT-23
- RS庫存編號:
- 166-0559
- 製造零件編號:
- PMBTA42,185
- 製造商:
- Nexperia
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD4,500.00
(不含稅)
TWD4,740.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年5月18日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD1.50 | TWD4,500.00 |
| 6000 + | TWD1.50 | TWD4,500.00 |
* 參考價格
- RS庫存編號:
- 166-0559
- 製造零件編號:
- PMBTA42,185
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 100mA | |
| Maximum Collector Emitter Voltage Vceo | 300V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 300V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 6V | |
| Maximum Transition Frequency ft | 50MHz | |
| Maximum Power Dissipation Pd | 250mW | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 25 | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Width | 1.4mm | |
| Length | 3mm | |
| Height | 1.1mm | |
| Series | PMBTA42 | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 100mA | ||
Maximum Collector Emitter Voltage Vceo 300V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 300V | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 6V | ||
Maximum Transition Frequency ft 50MHz | ||
Maximum Power Dissipation Pd 250mW | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 25 | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Width 1.4mm | ||
Length 3mm | ||
Height 1.1mm | ||
Series PMBTA42 | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Our low power loss, fast bipolar families of high-voltage transistors are ideally suited to high frequency switching in any powered application. In need of bipolar transistors that can withstand high voltage pulses (EMI requirements)? Then check out our high voltage devices with breakdown voltages from up to 400 V. Our HV transistors are fit for purpose for LCD backlighting, HID front lighting and half-bridge switches in CFL lighting applications.
High VCEO
Low VCEsat
Key applications
Hook switch for wired telecom
LED driver for high currents, LCD backlighting
Half-bridge switch in CFL lighting
Switched mode power supply (low power)
HID front lighting
NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PMBTA92.
High voltage (max. 300 V)
Target applications
Telephony and professional communication equipment
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