Microchip JANTX2N2222A Transistor, 800 mA NPN, 50 V dc, 3-Pin TO-18
- RS庫存編號:
- 838-598
- 製造零件編號:
- JANTX2N2222A
- 製造商:
- Microchip
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* 參考價格
- RS庫存編號:
- 838-598
- 製造零件編號:
- JANTX2N2222A
- 製造商:
- Microchip
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 800mA | |
| Maximum Collector Emitter Voltage Vceo | 50V dc | |
| Package Type | TO-18 | |
| Mount Type | Threaded Through Hole | |
| Transistor Configuration | Silicon Transistor | |
| Maximum Collector Base Voltage VCBO | 75V dc | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 100MHz | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 6V dc | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Operating Temperature | 200°C | |
| Pin Count | 3 | |
| Length | 19.03mm | |
| Height | 5.33mm | |
| Series | 2N2221A–2N2222A | |
| Width | 5.84mm | |
| Standards/Approvals | MIL-PRF-19500/255 | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 800mA | ||
Maximum Collector Emitter Voltage Vceo 50V dc | ||
Package Type TO-18 | ||
Mount Type Threaded Through Hole | ||
Transistor Configuration Silicon Transistor | ||
Maximum Collector Base Voltage VCBO 75V dc | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 100MHz | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 6V dc | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Operating Temperature 200°C | ||
Pin Count 3 | ||
Length 19.03mm | ||
Height 5.33mm | ||
Series 2N2221A–2N2222A | ||
Width 5.84mm | ||
Standards/Approvals MIL-PRF-19500/255 | ||
不相容
- COO (Country of Origin):
- PH
The Microchip radiation-hardened transistor is designed for reliable switching applications in harsh environments, offering high performance and durability against radiation exposure.
Qualified per MIL-PRF-19500/255 for military standards
Supports various radiation levels, providing versatility in applications
Thermal resistance and power dissipation characteristics ensure operational efficiency
Small-signal characteristics enhance switching performance
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