Nexperia PBSS5160U,115 Transistor, -1 A PNP, -60 V, 3-Pin UMT
- RS庫存編號:
- 485-353
- 製造零件編號:
- PBSS5160U,115
- 製造商:
- Nexperia
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可享批量折扣
查看批量定價選項小計（1 包，共 20 件）*
TWD152.00
(不含稅)
TWD159.60
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年3月25日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 740 | TWD7.60 | TWD152.00 |
| 760 - 1480 | TWD7.50 | TWD150.00 |
| 1500 + | TWD7.30 | TWD146.00 |
* 參考價格
- RS庫存編號:
- 485-353
- 製造零件編號:
- PBSS5160U,115
- 製造商:
- Nexperia
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -1A | |
| Maximum Collector Emitter Voltage Vceo | -60V | |
| Package Type | UMT | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 80V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Transition Frequency ft | 185MHz | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 100 | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Maximum Power Dissipation Pd | 415mW | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 2mm | |
| Height | 0.95mm | |
| Standards/Approvals | No | |
| Series | PBSS5160U | |
| Width | 1.25mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -1A | ||
Maximum Collector Emitter Voltage Vceo -60V | ||
Package Type UMT | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 80V | ||
Minimum Operating Temperature -65°C | ||
Maximum Transition Frequency ft 185MHz | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 100 | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Maximum Power Dissipation Pd 415mW | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 2mm | ||
Height 0.95mm | ||
Standards/Approvals No | ||
Series PBSS5160U | ||
Width 1.25mm | ||
Automotive Standard AEC-Q101 | ||
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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