STMicroelectronics 2STF2360 Transistor, 3 A PNP, -60 V, 3-Pin SOT-89
- RS庫存編號:
- 151-452P
- 製造零件編號:
- 2STF2360
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計 200 件 (以卷裝提供)*
TWD3,400.00
(不含稅)
TWD3,570.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 2,500 件從 2027年1月06日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 200 - 480 | TWD17.00 |
| 500 - 980 | TWD15.70 |
| 1000 - 1980 | TWD14.50 |
| 2000 + | TWD14.00 |
* 參考價格
- RS庫存編號:
- 151-452P
- 製造零件編號:
- 2STF2360
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 3A | |
| Maximum Collector Emitter Voltage Vceo | -60V | |
| Package Type | SOT-89 | |
| Mount Type | Surface | |
| Transistor Configuration | PNP | |
| Maximum Collector Base Voltage VCBO | -60V | |
| Minimum DC Current Gain hFE | 160 | |
| Maximum Emitter Base Voltage VEBO | -6V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 1.4W | |
| Transistor Polarity | PNP | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Height | 4.4mm | |
| Width | 1.4mm | |
| Length | 2.29mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 3A | ||
Maximum Collector Emitter Voltage Vceo -60V | ||
Package Type SOT-89 | ||
Mount Type Surface | ||
Transistor Configuration PNP | ||
Maximum Collector Base Voltage VCBO -60V | ||
Minimum DC Current Gain hFE 160 | ||
Maximum Emitter Base Voltage VEBO -6V | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 1.4W | ||
Transistor Polarity PNP | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Height 4.4mm | ||
Width 1.4mm | ||
Length 2.29mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics PNP transistor manufactured using new power bipolar high density current technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Can be used in emergency lighting and voltage regulation applications
High current gain characteristic
Fast switching speed
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