STMicroelectronics 2STF2360 Transistor, 3 A PNP, -60 V, 3-Pin SOT-89
- RS庫存編號:
- 151-452
- 製造零件編號:
- 2STF2360
- 製造商:
- STMicroelectronics
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可享批量折扣
查看批量定價選項小計（1 組，共 20 件）*
TWD366.00
(不含稅)
TWD384.40
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 2,500 件從 2026年11月25日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 20 - 180 | TWD18.30 | TWD366.00 |
| 200 - 480 | TWD17.40 | TWD348.00 |
| 500 - 980 | TWD16.10 | TWD322.00 |
| 1000 - 1980 | TWD14.80 | TWD296.00 |
| 2000 + | TWD14.30 | TWD286.00 |
* 參考價格
- RS庫存編號:
- 151-452
- 製造零件編號:
- 2STF2360
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 3A | |
| Maximum Collector Emitter Voltage Vceo | -60V | |
| Package Type | SOT-89 | |
| Mount Type | Surface | |
| Transistor Configuration | PNP | |
| Maximum Collector Base Voltage VCBO | -60V | |
| Maximum Emitter Base Voltage VEBO | -6V | |
| Transistor Polarity | PNP | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 1.4W | |
| Minimum DC Current Gain hFE | 160 | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.4mm | |
| Width | 1.4mm | |
| Length | 2.29mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 3A | ||
Maximum Collector Emitter Voltage Vceo -60V | ||
Package Type SOT-89 | ||
Mount Type Surface | ||
Transistor Configuration PNP | ||
Maximum Collector Base Voltage VCBO -60V | ||
Maximum Emitter Base Voltage VEBO -6V | ||
Transistor Polarity PNP | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 1.4W | ||
Minimum DC Current Gain hFE 160 | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Height 4.4mm | ||
Width 1.4mm | ||
Length 2.29mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics PNP transistor manufactured using new power bipolar high density current technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Can be used in emergency lighting and voltage regulation applications
High current gain characteristic
Fast switching speed
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