STMicroelectronics 2STN1360 Transistor, 3 A NPN, 60 V, 4-Pin SOT-223
- RS庫存編號:
- 151-435
- Distrelec 貨號:
- 304-37-456
- 製造零件編號:
- 2STN1360
- 製造商:
- STMicroelectronics
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查看批量定價選項小計（1 組，共 25 件）*
TWD447.50
(不含稅)
TWD470.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 675 件從 2026年9月14日 起發貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 25 - 75 | TWD17.90 | TWD447.50 |
| 100 - 225 | TWD17.00 | TWD425.00 |
| 250 - 475 | TWD15.70 | TWD392.50 |
| 500 + | TWD14.50 | TWD362.50 |
* 參考價格
- RS庫存編號:
- 151-435
- Distrelec 貨號:
- 304-37-456
- 製造零件編號:
- 2STN1360
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 3A | |
| Maximum Collector Emitter Voltage Vceo | 60V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 80V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Minimum Operating Temperature | -60°C | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 6V | |
| Minimum DC Current Gain hFE | 80 | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.29mm | |
| Height | 4.4mm | |
| Standards/Approvals | RoHS | |
| Width | 1.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 3A | ||
Maximum Collector Emitter Voltage Vceo 60V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 80V | ||
Maximum Power Dissipation Pd 1.6W | ||
Minimum Operating Temperature -60°C | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 6V | ||
Minimum DC Current Gain hFE 80 | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Length 2.29mm | ||
Height 4.4mm | ||
Standards/Approvals RoHS | ||
Width 1.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics NPN transistor is manufactured using new low voltage Planar technology with double metal process. The result is a transistor which boasts exceptionally high gain performance coupled with very low saturation voltage.
High current gain characteristic
Fast switching speed
Can be used in emergency lighting and voltage regulation applications
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