STMicroelectronics MJD112T4 Transistor, 2 A NPN, 100 V, 3-Pin DPAK
- RS庫存編號:
- 151-413
- 製造零件編號:
- MJD112T4
- 製造商:
- STMicroelectronics
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可享批量折扣
查看批量定價選項小計（1 組，共 20 件）*
TWD444.00
(不含稅)
TWD466.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,800 件從 2026年9月14日 起發貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 20 - 180 | TWD22.20 | TWD444.00 |
| 200 - 480 | TWD21.10 | TWD422.00 |
| 500 - 980 | TWD19.50 | TWD390.00 |
| 1000 - 1980 | TWD18.00 | TWD360.00 |
| 2000 + | TWD17.30 | TWD346.00 |
* 參考價格
- RS庫存編號:
- 151-413
- 製造零件編號:
- MJD112T4
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 2A | |
| Maximum Collector Emitter Voltage Vceo | 100V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 100V | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum DC Current Gain hFE | 200 | |
| Maximum Power Dissipation Pd | 20W | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | -65°C | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.4m | |
| Height | 6mm | |
| Standards/Approvals | RoHS | |
| Width | 2.2mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 2A | ||
Maximum Collector Emitter Voltage Vceo 100V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 100V | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum DC Current Gain hFE 200 | ||
Maximum Power Dissipation Pd 20W | ||
Transistor Polarity NPN | ||
Minimum Operating Temperature -65°C | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 6.4m | ||
Height 6mm | ||
Standards/Approvals RoHS | ||
Width 2.2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Transistors, This device is manufactured in Planar technology with “base island” layout and monolithic Darlington configuration.
Good hFE linearity
High fT frequency
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