Power Integrations SiC Schottky, Single, 12 A, 2-Pin 600 V TO-220 QH12TZ600Q

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有Switching Diodes
可享批量折扣

小計（1 包，共 5 件）*

TWD242.00

(不含稅)

TWD254.10

(含稅)

Add to Basket
選擇或輸入數量
庫存資訊目前無法存取 - 請稍後再回來查看

單位
每單位
每包*
5 - 5TWD48.40TWD242.00
10 +TWD47.40TWD237.00

* 參考價格

包裝方式：
RS庫存編號:
231-8074
製造零件編號:
QH12TZ600Q
製造商:
Power Integrations
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Power Integrations

Diode Configuration

Single

Maximum Forward Current If

12A

Product Type

SiC Schottky

Sub Type

SiC Schottky

Mount Type

Through Hole

Package Type

TO-220

Pin Count

2

Maximum Forward Voltage Vf

3.1V

Maximum Peak Reverse Repetitive Voltage Vrrm

600V

Peak Non-Repetitive Forward Surge Current Ifsm

100A

Peak Reverse Recovery Time trr

20.5ns

Maximum Power Dissipation Pd

61mW

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

10.67mm

Height

30.73mm

Automotive Standard

No

The Power Integrations Qspeed H-Series SiC Replacement Diode has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduces EMI and eliminates snubbers. It replaces SiC diodes for similar efficiency performance in high switching frequency applications.

Features and Benefits


Low QRR, low IRRM, low tRR

High dIF/dt capable (1000 A / μs)

Soft recovery

AEC-Q101 qualified

Fab, assembly and test certified to IATF 16949

Eliminates need for snubber circuits

Reduces EMI filter component size & count

Enables extremely fast switching

Applications


Power Factor Correction boost diode in on-board charger

Output rectifier of on-board charger

相關連結