Infineon SRAM Memory Chip, CY7C1061GE30-10ZSXI- 16Mbit

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TWD131,446.80

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  • 2027年1月15日 發貨
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RS庫存編號:
181-7451
製造零件編號:
CY7C1061GE30-10ZSXI
製造商:
Infineon
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品牌

Infineon

Memory Size

16Mbit

Organisation

1M x 16 bit

Number of Words

1M

Number of Bits per Word

16bit

Maximum Random Access Time

10ns

Address Bus Width

16bit

Clock Frequency

100MHz

Low Power

Yes

Timing Type

Asynchronous

Mounting Type

Surface Mount

Package Type

TSOP

Pin Count

54

Dimensions

22.51 x 10.26 x 1.05mm

Maximum Operating Supply Voltage

3.6 V

Height

1.05mm

Length

22.51mm

Maximum Operating Temperature

+85 °C

Width

10.26mm

Minimum Operating Supply Voltage

2.2 V

Minimum Operating Temperature

-40 °C

CY7C1061G and CY7C1061GE are high-performance CMOS fast static RAM devices with embedded ECC. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY7C1061GE device includes an ERR pin that signals a single-bit error-detection and correction event during a read cycle.

High speed
tAA = 10 ns/15 ns
Embedded error-correcting code (ECC) for single-bit error
correction[1, 2]
Low active and standby currents
ICC = 90 mA typical at 100 MHz
ISB2 = 20 mA typical
Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and
4.5 V to 5.5 V
1.0 V data retention
Transistor-transistor logic (TTL) compatible inputs and outputs
Error indication (ERR) pin to indicate 1-bit error detection and correction
Available in Pb-free 48-pin TSOP I, 54-pin TSOP II, and 48-ball VFBGA packages

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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