Vishay 45 V 400 A Diode Recovery 3-Pin TO-240AA

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有Schottky Diodes & Rectifiers
可享批量折扣
查看批量定價選項

小計（1 件）*

TWD1,838.00

(不含稅)

TWD1,929.90

(含稅)

Add to Basket
選擇或輸入數量
庫存資訊目前無法存取 - 請稍後再回來查看

單位
每單位
1 - 2TWD1,838.00
3 - 4TWD1,793.00
5 +TWD1,764.00

* 參考價格

RS庫存編號:
873-2354
製造零件編號:
VS-VSKCS400/045
製造商:
Vishay
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Vishay

Mount Type

Panel

Product Type

Diode

Package Type

TO-240AA

Maximum Continuous Forward Current If

400A

Peak Reverse Repetitive Voltage Vrrm

45V

Series

ADD-A-PAK Generation VII

Diode Configuration

Two Diodes Common Cathodes

Rectifier Type

Recovery

Pin Count

3

Maximum Forward Voltage Vf

1.14V

Minimum Operating Temperature

-55°C

Peak Reverse Current Ir

1.2A

Peak Non-Repetitive Forward Surge Current Ifsm

29kA

Maximum Operating Temperature

150°C

Standards/Approvals

UL Approved File E78996

Height

35mm

Width

22.6mm

Length

92mm

Automotive Standard

No

COO (Country of Origin):
IT

IGBT Modules, Vishay


Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

Wide range of industry-standard package styles

Direct mount on heat sink

Choice of PT, NPT, and Trench IGBT technologies

Low-VCE(on) IGBT

Switching frequency from 1 kHz to 150 kHz

Rugged transient performance

High isolation voltage up to 3500 V

100 % lead (Pb)-free and RoHS-compliant

Low thermal resistance

Wide operating temperature range (-40 °C to +175 °C)

IGBT Modules, Vishay


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

相關連結