DiodesZetex 20 V 2 A Diode Schottky 2-Pin DO-214AC B220A-13-F
- RS庫存編號:
- 751-3229P
- 製造零件編號:
- B220A-13-F
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計 1250 件 (以卷裝提供)*
TWD9,125.00
(不含稅)
TWD9,575.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 10,950 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1250 - 2475 | TWD7.30 |
| 2500 + | TWD7.20 |
* 參考價格
- RS庫存編號:
- 751-3229P
- 製造零件編號:
- B220A-13-F
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | DO-214AC | |
| Maximum Continuous Forward Current If | 2A | |
| Peak Reverse Repetitive Voltage Vrrm | 20V | |
| Diode Configuration | Single | |
| Series | B220A | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -65°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 50A | |
| Peak Reverse Current Ir | 20mA | |
| Maximum Forward Voltage Vf | 500mV | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.1mm | |
| Length | 4.6mm | |
| Standards/Approvals | FBI | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type DO-214AC | ||
Maximum Continuous Forward Current If 2A | ||
Peak Reverse Repetitive Voltage Vrrm 20V | ||
Diode Configuration Single | ||
Series B220A | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -65°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 50A | ||
Peak Reverse Current Ir 20mA | ||
Maximum Forward Voltage Vf 500mV | ||
Maximum Operating Temperature 150°C | ||
Height 2.1mm | ||
Length 4.6mm | ||
Standards/Approvals FBI | ||
Automotive Standard AEC-Q101 | ||
Schottky Barrier Diodes, 2A to 9A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two Terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.