DiodesZetex 30 V 1 A Diode General Purpose 2-Pin SOD-323
- RS庫存編號:
- 708-2295P
- 製造零件編號:
- SBR130S3-7
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計 750 件 (以卷裝提供)*
TWD7,200.00
(不含稅)
TWD7,560.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 11,950 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 750 - 1475 | TWD9.60 |
| 1500 + | TWD9.40 |
* 參考價格
- RS庫存編號:
- 708-2295P
- 製造零件編號:
- SBR130S3-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | SOD-323 | |
| Maximum Continuous Forward Current If | 1A | |
| Peak Reverse Repetitive Voltage Vrrm | 30V | |
| Diode Configuration | Single | |
| Series | 1A SBR | |
| Rectifier Type | General Purpose | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -65°C | |
| Peak Reverse Current Ir | 15mA | |
| Maximum Forward Voltage Vf | 460mV | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 20A | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | FBI | |
| Length | 1.8mm | |
| Height | 1.05mm | |
| Automotive Standard | AEC | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type SOD-323 | ||
Maximum Continuous Forward Current If 1A | ||
Peak Reverse Repetitive Voltage Vrrm 30V | ||
Diode Configuration Single | ||
Series 1A SBR | ||
Rectifier Type General Purpose | ||
Pin Count 2 | ||
Minimum Operating Temperature -65°C | ||
Peak Reverse Current Ir 15mA | ||
Maximum Forward Voltage Vf 460mV | ||
Peak Non-Repetitive Forward Surge Current Ifsm 20A | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals FBI | ||
Length 1.8mm | ||
Height 1.05mm | ||
Automotive Standard AEC | ||
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two Terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.