Infineon 4 V 110 mA Diode Schottky 2-Pin SOD-323 BAT1503WE6327HTSA1

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包裝方式:
RS庫存編號:
261-3915
製造零件編號:
BAT1503WE6327HTSA1
製造商:
Infineon
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品牌

Infineon

Product Type

Diode

Mount Type

Surface

Package Type

SOD-323

Maximum Continuous Forward Current If

110mA

Peak Reverse Repetitive Voltage Vrrm

4V

Diode Configuration

Single

Series

BAT15-03W

Rectifier Type

Schottky

Pin Count

2

Maximum Forward Voltage Vf

0.32V

Peak Reverse Current Ir

5μA

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

2.5mm

Height

0.9mm

Standards/Approvals

JEDEC47/20/22

Width

1.25mm

Automotive Standard

No

The Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

RoHS compliant and halogen-free

Low capacitance and inductance

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