STMicroelectronics 1200 V 10 A Diode 2-Pin D2PAK
- RS庫存編號:
- 219-4232P
- 製造零件編號:
- STPSC10H12G2-TR
- 製造商:
- STMicroelectronics
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- 從 2027年4月05日 發貨
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- RS庫存編號:
- 219-4232P
- 製造零件編號:
- STPSC10H12G2-TR
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.25V | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 60A | |
| Peak Reverse Current Ir | 30μA | |
| Maximum Operating Temperature | 175°C | |
| Width | 10mm | |
| Standards/Approvals | RoHS | |
| Length | 15.4mm | |
| Height | 4.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.25V | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 60A | ||
Peak Reverse Current Ir 30μA | ||
Maximum Operating Temperature 175°C | ||
Width 10mm | ||
Standards/Approvals RoHS | ||
Length 15.4mm | ||
Height 4.3mm | ||
Automotive Standard No | ||
The STMicroelectronics 10 A, 1200 V Sic diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1. The STPSC10H12G2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
No or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
Operating Tj from -40 °C to 175 °C
Low VF
D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
ECOPACK2 compliant
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