onsemi 650 V 10 A Diode Schottky 5-Pin PQFN FFSM1065B
- RS庫存編號:
- 214-8798
- 製造零件編號:
- FFSM1065B
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD485.00
(不含稅)
TWD509.25
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 2,980 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 745 | TWD97.00 | TWD485.00 |
| 750 - 1495 | TWD94.40 | TWD472.00 |
| 1500 + | TWD93.20 | TWD466.00 |
* 參考價格
- RS庫存編號:
- 214-8798
- 製造零件編號:
- FFSM1065B
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | PQFN | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Rectifier Type | Schottky | |
| Pin Count | 5 | |
| Peak Reverse Current Ir | 40μA | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 42A | |
| Maximum Forward Voltage Vf | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Length | 8mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type PQFN | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Rectifier Type Schottky | ||
Pin Count 5 | ||
Peak Reverse Current Ir 40μA | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 42A | ||
Maximum Forward Voltage Vf 1.7V | ||
Maximum Operating Temperature 175°C | ||
Length 8mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, Power88
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, Power88
The ON Semiconductor FFSM series is silicon carbide schottky diodes use a completely new technology that provides superior switching performance and higher reliability compared to silicon. It is typically used in inverters, SMPS and UPS etc.
Highest efficiency
Faster operating frequency
Increased power density
Reduced EMI
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