onsemi 650 V 10.1 A Schottky Diode Schottky 2-Pin TO-220 FFSP0865B
- RS庫存編號:
- 195-8722
- 製造零件編號:
- FFSP0865B
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD543.00
(不含稅)
TWD570.20
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月21日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD54.30 | TWD543.00 |
| 20 - 20 | TWD53.00 | TWD530.00 |
| 30 + | TWD52.10 | TWD521.00 |
* 參考價格
- RS庫存編號:
- 195-8722
- 製造零件編號:
- FFSP0865B
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 10.1A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | EliteSiC | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Reverse Current Ir | 160μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 56A | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Height | 16.51mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 10.1A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series EliteSiC | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Reverse Current Ir 160μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 56A | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Height 16.51mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, TO-220-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, TO-220-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature 175°C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
These Devices are Pb−Free, Halogen Free/BFR Free
Applications
General Purpose
SMPS, Solar Inverter, UPS
Power Switching Circuits
相關連結
- onsemi 650 V 10.1 A Schottky Diode Schottky 2-Pin TO-220
- onsemi 650 V 10.1 A Schottky Diode Schottky 2-Pin D2PAK
- onsemi 650 V 10.1 A Diode Schottky 3-Pin D2PAK
- onsemi 650 V 10.1 A Schottky Diode Schottky 2-Pin D2PAK FFSB0865B-F085
- onsemi 650 V 10.1 A Diode Schottky 3-Pin D2PAK FFSB0865B
- onsemi 650 V 8 A Schottky Diode Schottky 2-Pin TO-220
- onsemi 650 V 8 A Schottky Diode Schottky 2-Pin TO-220 FFSP0665B
- onsemi 650 V 40 A Schottky Diode Schottky 3-Pin TO-220