onsemi 650 V 9.1 A Diode Schottky 3-Pin DPAK FFSD0665B
- RS庫存編號:
- 194-5748
- 製造零件編號:
- FFSD0665B
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
TWD308.00
(不含稅)
TWD323.40
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 2,420 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 620 | TWD61.60 | TWD308.00 |
| 625 - 1245 | TWD59.80 | TWD299.00 |
| 1250 + | TWD59.20 | TWD296.00 |
* 參考價格
- RS庫存編號:
- 194-5748
- 製造零件編號:
- FFSD0665B
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 9.1A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 493A | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 160μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 9.1A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 493A | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 160μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 6.22mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, DPAK
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, DPAK
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
High UIS, Surge Current, and Avalanche
High Junction Temperature
Low Vf
No Qrr
49mJ @ 25C
Tj = 175C
1.41V
< 100nC
Applications
PFC
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