onsemi 1200 V 50 A Diode Schottky 3-Pin TO-247 FFSH40120ADN-F085
- RS庫存編號:
- 178-4647
- 製造零件編號:
- FFSH40120ADN-F085
- 製造商:
- onsemi
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 件)*
TWD505.00
(不含稅)
TWD530.25
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 165 件從 2026年4月27日 起發貨
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單位 | 每單位 |
|---|---|
| 1 - 7 | TWD505.00 |
| 8 - 14 | TWD493.00 |
| 15 + | TWD486.00 |
* 參考價格
- RS庫存編號:
- 178-4647
- 製造零件編號:
- FFSH40120ADN-F085
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 50A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Dual Common Cathode | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1.19kA | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 400μA | |
| Maximum Forward Voltage Vf | 1.75V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Height | 20.82mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 50A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Dual Common Cathode | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1.19kA | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 400μA | ||
Maximum Forward Voltage Vf 1.75V | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Height 20.82mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 40A, 1200V, D1, TO-247-3L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Max Junction Temperature 175 °C
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Applications:
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
End Products:
Automotive HEV-EV Onboard Chargers
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