Wolfspeed 1200 V 19 A Diode Schottky 3-Pin DPAK
- RS庫存編號:
- 177-7188
- 製造零件編號:
- C4D05120E
- 製造商:
- Wolfspeed
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- RS庫存編號:
- 177-7188
- 製造零件編號:
- C4D05120E
- 製造商:
- Wolfspeed
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Wolfspeed | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 19A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 300μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 42A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 7.34mm | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Wolfspeed | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 19A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Reverse Current Ir 300μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 42A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 3V | ||
Maximum Operating Temperature 175°C | ||
Length 7.34mm | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Automotive Standard No | ||
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed
A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters.
• 600, 650, 1200 and 1700 Voltage ratings
• Zero reverse recovery current and forward recovery voltage
• Temperature-independent switching behaviour
• Extremely fast switching times with minimal losses
• Positive temperature coefficient forward voltage
• Devices can be paralleled without thermal runaway
• Reduction in heatsink requirements
• Optimized for PFC boost diode applications