規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	STMicroelectronics
	Mount Type	Through Hole
	Product Type	Diode
	Package Type	TO-220
	Maximum Continuous Forward Current If	8A
	Peak Reverse Repetitive Voltage Vrrm	650V
	Series	STPSC
	Diode Configuration	Single
	Rectifier Type	Schottky
	Pin Count	2
	Peak Non-Repetitive Forward Surge Current Ifsm	200A
	Minimum Operating Temperature	-40°C
	Maximum Forward Voltage Vf	1.65V
	Peak Reverse Current Ir	750μA
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.4mm
	Height	15.75mm
	Automotive Standard	No

	選取全部
	品牌 STMicroelectronics
	Mount Type Through Hole
	Product Type Diode
	Package Type TO-220
	Maximum Continuous Forward Current If 8A
	Peak Reverse Repetitive Voltage Vrrm 650V
	Series STPSC
	Diode Configuration Single
	Rectifier Type Schottky
	Pin Count 2
	Peak Non-Repetitive Forward Surge Current Ifsm 200A
	Minimum Operating Temperature -40°C
	Maximum Forward Voltage Vf 1.65V
	Peak Reverse Current Ir 750μA
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.4mm
	Height 15.75mm
	Automotive Standard No

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases

No or negligible reverse recovery

Switching behavior independent of temperature

Dedicated to PFC applications

High forward surge capability

Operating Tj from -40 °C to 175 °C

STMicroelectronics 650 V 8 A Diode Schottky 2-Pin TO-220 STPSC8065D