STMicroelectronics 650 V 10 A Schottky Diode Schottky 2-Pin TO-220AC
- RS庫存編號:
- 164-6967
- 製造零件編號:
- STPSC10065D
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD4,335.00
(不含稅)
TWD4,552.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年9月28日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 200 | TWD86.70 | TWD4,335.00 |
| 250 + | TWD84.10 | TWD4,205.00 |
* 參考價格
- RS庫存編號:
- 164-6967
- 製造零件編號:
- STPSC10065D
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Schottky Diode | |
| Package Type | TO-220AC | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | STPSC10065 | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 48A | |
| Minimum Operating Temperature | -40°C | |
| Maximum Forward Voltage Vf | 1.65V | |
| Peak Reverse Current Ir | 130μA | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.75mm | |
| Standards/Approvals | ECOPACK, UL94 V0 | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Schottky Diode | ||
Package Type TO-220AC | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series STPSC10065 | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 48A | ||
Minimum Operating Temperature -40°C | ||
Maximum Forward Voltage Vf 1.65V | ||
Peak Reverse Current Ir 130μA | ||
Maximum Operating Temperature 175°C | ||
Height 15.75mm | ||
Standards/Approvals ECOPACK, UL94 V0 | ||
Length 10.4mm | ||
Automotive Standard No | ||
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases
No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
Operating Tj from -40 °C to 175 °C
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