onsemi 1200 V 5 A Schottky Diode & Rectifier Merged Pin Schottky 2-Pin TO-220-2 UJ3D1205TS
- RS庫存編號:
- 648-520
- 製造零件編號:
- UJ3D1205TS
- 製造商:
- onsemi
此圖片僅供參考,請參閲產品詳細資訊及規格
小計(1 袋,共 2 件)*
TWD200.00
(不含稅)
TWD210.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,000 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每袋* |
|---|---|---|
| 2 + | TWD100.00 | TWD200.00 |
* 參考價格
- RS庫存編號:
- 648-520
- 製造零件編號:
- UJ3D1205TS
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Schottky Diode & Rectifier | |
| Mount Type | Through Hole | |
| Package Type | TO-220-2 | |
| Maximum Continuous Forward Current If | 5A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | UJ3 | |
| Rectifier Type | Merged Pin Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 55A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.6V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 70A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, Pb-Free | |
| Height | 15.37mm | |
| Length | 10.16mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Schottky Diode & Rectifier | ||
Mount Type Through Hole | ||
Package Type TO-220-2 | ||
Maximum Continuous Forward Current If 5A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series UJ3 | ||
Rectifier Type Merged Pin Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 55A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.6V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 70A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, Pb-Free | ||
Height 15.37mm | ||
Length 10.16mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Easy paralleling
Extremely fast switching not dependent on temperature
No reverse or forward recovery
100% UIS tested
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