Nexperia 650 V 20 A Rectifier & Schottky Diode Schottky 2-Pin D2PAK PSC2065JJ
- RS庫存編號:
- 554-325
- 製造零件編號:
- PSC2065JJ
- 製造商:
- Nexperia
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TWD341.00
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD341.00 |
| 10 - 49 | TWD277.00 |
| 50 - 99 | TWD212.00 |
| 100 + | TWD188.00 |
* 參考價格
- RS庫存編號:
- 554-325
- 製造零件編號:
- PSC2065JJ
- 製造商:
- Nexperia
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Mount Type | Surface | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | TO-263 R2P | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | PSC2065J | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 1250μA | |
| Maximum Forward Voltage Vf | 2.6V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 80A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60134 | |
| Height | 4.46mm | |
| Length | 10.35mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Mount Type Surface | ||
Product Type Rectifier & Schottky Diode | ||
Package Type TO-263 R2P | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series PSC2065J | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 1250μA | ||
Maximum Forward Voltage Vf 2.6V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 80A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60134 | ||
Height 4.46mm | ||
Length 10.35mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Nexperia Leading edge Silicon Carbide (SiC) Schottky diode is used for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behaviour combined with an outstanding figure-of-merit. The Merged PiN Schottky diode improves the robustness expressed in a high IFSM.
High power density
Reduced system costs
System miniaturization
Reduced EMI
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