onsemi MJ11015G 1 Darlington Transistor PNP, -20 A 120 V HFE:200, 3-Pin TO-204
- RS庫存編號:
- 103-5055
- 製造零件編號:
- MJ11015G
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 托盤，共 100 件）*
TWD17,500.00
(不含稅)
TWD18,375.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 200 件從 2026年7月15日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每托盤* |
|---|---|---|
| 100 - 100 | TWD175.00 | TWD17,500.00 |
| 200 - 900 | TWD171.20 | TWD17,120.00 |
| 1000 + | TWD167.80 | TWD16,780.00 |
* 參考價格
- RS庫存編號:
- 103-5055
- 製造零件編號:
- MJ11015G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Darlington Transistor | |
| Maximum Continuous Collector Current Ic | -20A | |
| Maximum Collector Emitter Voltage Vceo | 120V | |
| Package Type | TO-204 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Minimum DC Current Gain hFE | 200 | |
| Maximum Power Dissipation Pd | 200W | |
| Transistor Polarity | PNP | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Base Voltage VCBO | 120V | |
| Maximum Operating Temperature | 200°C | |
| Series | MJ11012 | |
| Standards/Approvals | No | |
| Length | 39.37mm | |
| Height | 8.51mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Darlington Transistor | ||
Maximum Continuous Collector Current Ic -20A | ||
Maximum Collector Emitter Voltage Vceo 120V | ||
Package Type TO-204 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Minimum DC Current Gain hFE 200 | ||
Maximum Power Dissipation Pd 200W | ||
Transistor Polarity PNP | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Base Voltage VCBO 120V | ||
Maximum Operating Temperature 200°C | ||
Series MJ11012 | ||
Standards/Approvals No | ||
Length 39.37mm | ||
Height 8.51mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CZ
The ON Semiconductor MJ11015G is a 30A, 120V PNP Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11015G comes in a Pb-free TO-204AA (TO-3) though hole package.
• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• PNP Polarity
Versions Available:
688-1502 - pack of 2
103-5055 - tray of 100
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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