STMicroelectronics STDRIVEG611Q High Side 4, High Side Power Switch IC 18-Pin, QFN

查看所有Power Switch ICs
可享批量折扣

小計（1 件）*

TWD109.00

(不含稅)

TWD114.45

(含稅)

Add to Basket
選擇或輸入數量
有限的庫存
  • 加上 980 件從 2026年5月04日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位
每單位
1 - 9TWD109.00
10 - 99TWD98.00
100 - 499TWD90.00
500 - 999TWD84.00
1000 +TWD75.00

* 參考價格

RS庫存編號:
330-240
製造零件編號:
STDRIVEG611Q
製造商:
STMicroelectronics
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

STMicroelectronics

Power Switch Topology

High Side

Product Type

Power Switch IC

Power Switch Type

High Side

Switch On Resistance RdsOn

3.7Ω

Number of Inputs

4

Minimum Supply Voltage

0.3V

Package Type

QFN

Pin Count

18

Maximum Supply Voltage

21V

Minimum Operating Temperature

-40°C

Operating Current

3.5mA

Maximum Operating Temperature

125°C

Height

1mm

Standards/Approvals

RoHS

Length

5mm

Series

STDRIVEG611

Automotive Standard

No

The STMicroelectronics High voltage and high-speed half-bridge gate driver for GaN power switches is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN. The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode. High current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG611 optimized for driving high-speed GaN.

High-side and low-side linear regulators for 6 V gate driving voltage

Fast high-side startup time 5 μs

45 ns propagation delay and 15 ns minimum output pulse

High switching frequency (greater than 1 MHz)

Embedded 600 V bootstrap diode

Full support of GaN hard-switching operation

Comparator for overcurrent detection with Smart Shutdown

UVLO function on VCC, VHS, and VLS

Separated logic inputs and shutdown pin

Fault pin for overcurrent, over temperature and UVLO reporting

Stand-by function for low consumption mode

相關連結