OSI Optoelectronics Ultraviolet Photodiode, 65 °, Through Hole TO-8
- RS庫存編號:
- 848-6281
- 製造零件編號:
- UV-035EQ
- 製造商:
- OSI Optoelectronics
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可享批量折扣
小計（1 件）*
TWD1,768.00
(不含稅)
TWD1,856.40
(含稅)
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單位 | 每單位 |
|---|---|
| 1 - 1 | TWD1,768.00 |
| 2 - 2 | TWD1,723.00 |
| 3 + | TWD1,698.00 |
* 參考價格
- RS庫存編號:
- 848-6281
- 製造零件編號:
- UV-035EQ
- 製造商:
- OSI Optoelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | OSI Optoelectronics | |
| Product Type | Photodiode | |
| Spectrums Detected | Ultraviolet | |
| Wavelength of Peak Sensitivity | 720nm | |
| Package Type | TO-8 | |
| Mount Type | Through Hole | |
| Packaging | Tape & Reel | |
| Number of Pins | 2 | |
| Minimum Wavelength Detected | 320nm | |
| Maximum Wavelength Detected | 1100nm | |
| Typical Fall Time | 0.6ns | |
| Minimum Operating Temperature | -25°C | |
| Amplified | No | |
| Maximum Operating Temperature | 85°C | |
| Length | 8mm | |
| Height | 5.21mm | |
| Width | 5mm | |
| Standards/Approvals | RoHS | |
| Angle of Half Sensitivity | 65 ° | |
| Diameter | 13.97mm | |
| Dark Current | 0.2nA | |
| Automotive Standard | No | |
| Polarity | Reverse | |
| Breakdown Voltage | 30V | |
| Typical Rise Time | 0.6ns | |
| 選取全部 | ||
|---|---|---|
品牌 OSI Optoelectronics | ||
Product Type Photodiode | ||
Spectrums Detected Ultraviolet | ||
Wavelength of Peak Sensitivity 720nm | ||
Package Type TO-8 | ||
Mount Type Through Hole | ||
Packaging Tape & Reel | ||
Number of Pins 2 | ||
Minimum Wavelength Detected 320nm | ||
Maximum Wavelength Detected 1100nm | ||
Typical Fall Time 0.6ns | ||
Minimum Operating Temperature -25°C | ||
Amplified No | ||
Maximum Operating Temperature 85°C | ||
Length 8mm | ||
Height 5.21mm | ||
Width 5mm | ||
Standards/Approvals RoHS | ||
Angle of Half Sensitivity 65 ° | ||
Diameter 13.97mm | ||
Dark Current 0.2nA | ||
Automotive Standard No | ||
Polarity Reverse | ||
Breakdown Voltage 30V | ||
Typical Rise Time 0.6ns | ||
OSI UV Enhanced Series Photodiodes
The UV Enhanced series, from OSI Optoelectronics, are a range of UV enhanced silicon photodiodes. This series includes two seperate families of photodiodes, inversion channel and planar diffused. Both of these families are designed for low noise detection in the UV region of the electromagnetic spectrum.
The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements.
Photodiodes with the planar diffused structure offer a lower capacitance and higher response time compared to the inversion later family. They also show linearity of photocurrent up to higher light input power compared to the inversion layer photodiodes.
Suitable applications for the UV Enhanced series includes; pollution monitoring, medical instrumentation, UV exposure meters, spectroscopy, water purification and fluorescence.
Features of the UV Enhanced series:
Inversion layers or planar diffused silicon photodiodes
Excellent UV response
Photodiodes, OSI Optoelectronics
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