服務
Ideas and Advice
折扣優惠
包裹追蹤
登入
主目錄
製造零件編號
最近搜索
Automation & Control Gear
Cables & Wires
Enclosures & Server Racks
Fuses & Circuit Breakers
HVAC, Fans & Thermal Management
Lighting
Relays & Signal Conditioning
Switches
Batteries & Chargers
Connectors
Displays & Optoelectronics
ESD Control, Cleanroom & PCB Prototyping
Passive Components
Power Supplies & Transformers
Raspberry Pi, Arduino, ROCK, STEM Education & Development Tools
Semiconductors
Access, Storage & Material Handling
Adhesives, Sealants & Tapes
Bearings & Seals
Engineering Materials & Industrial Hardware
Fasteners & Fixings
Hand Tools
Mechanical Power Transmission
Plumbing & Pipeline
Pneumatics & Hydraulics
Power Tools, Soldering & Welding
Computing & Peripherals
Facilities Cleaning & Maintenance
Office Supplies
Personal Protective Equipment & Workwear
Security & Ironmongery
Site Safety
Test & Measurement
Semiconductors
Discrete Semiconductors
MOSFETs
N-Channel MOSFET, 500 A, 75 V, 24-Pin SMPD IXYS MMIX1F520N075T2
RS庫存編號:
875-2471P
製造零件編號:
MMIX1F520N075T2
製造商:
IXYS
產品概覽和技術數據資料表 (2)
此圖片僅供參考,請參閲產品詳細資訊及規格
查看所有MOSFETs
當前暫無庫存,可於24/01/2025發貨,6 工作日送達。
Add to Basket
單位
選擇或輸入數量
單位
選擇或輸入數量
延期交貨
添加到收藏夾
單價(不含稅) 個 (以每管裝提供)
TWD719.00
(不含稅)
TWD754.95
(含稅)
單位
每單位
5 - 9
TWD719.00
10 +
TWD709.00
包裝方式:
標準包裝
行業包裝
RS庫存編號:
875-2471P
製造零件編號:
MMIX1F520N075T2
製造商:
IXYS
法例與合規
產品詳細資訊
規格
相容
符合聲明
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
屬性
值
Channel Type
N
Maximum Continuous Drain Current
500 A
Maximum Drain Source Voltage
75 V
Package Type
SMPD
Series
GigaMOS, HiperFET
Mounting Type
Surface Mount
Pin Count
24
Maximum Drain Source Resistance
1.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
545 nC @ 10 V
Length
25.25mm
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Width
23.25mm
Height
5.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.25V