服務
Ideas and Advice
折扣優惠
包裹追蹤
登入
主目錄
製造零件編號
最近搜索
Automation & Control Gear
Cables & Wires
Enclosures & Server Racks
Fuses & Circuit Breakers
HVAC, Fans & Thermal Management
Lighting
Relays & Signal Conditioning
Switches
Batteries & Chargers
Connectors
Displays & Optoelectronics
ESD Control, Cleanroom & PCB Prototyping
Passive Components
Power Supplies & Transformers
Raspberry Pi, Arduino, ROCK, STEM Education & Development Tools
Semiconductors
Access, Storage & Material Handling
Adhesives, Sealants & Tapes
Bearings & Seals
Engineering Materials & Industrial Hardware
Fasteners & Fixings
Hand Tools
Mechanical Power Transmission
Plumbing & Pipeline
Pneumatics & Hydraulics
Power Tools, Soldering & Welding
Computing & Peripherals
Facilities Cleaning & Maintenance
Office Supplies
Personal Protective Equipment & Workwear
Security & Ironmongery
Site Safety
Test & Measurement
Semiconductors
Discrete Semiconductors
MOSFETs
N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220 Toshiba TK32E12N1,S1X(S
RS庫存編號:
827-6191P
製造零件編號:
TK32E12N1,S1X(S
製造商:
Toshiba
此圖片僅供參考,請參閲產品詳細資訊及規格
查看所有MOSFETs
此產品已停售
替代產品
該產品我們目前不提供。 這是我們推薦的替代產品。
N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220 Toshiba TK32E12N1,S1X(S
RS庫存編號
168-7971
單價(不含稅) 毎管:50 個
TWD29.30
(不含稅)
TWD30.76
(含稅)
RS庫存編號:
827-6191P
製造零件編號:
TK32E12N1,S1X(S
製造商:
Toshiba
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
規格
TK32E12N1, MOSFET Silicon N-Channel MOS (U-MOS VIII-H)
ESD Control Selection Guide V1
相容
符合聲明
COO (Country of Origin):
CN
MOSFET N-Channel, TK3x Series, Toshiba
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Toshiba
屬性
值
Channel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
98 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
34 nC @ 10 V
Length
10.16mm
Width
4.45mm
Height
15.1mm