N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS
- RS庫存編號:
- 827-4919P
- 製造零件編號:
- CSD19536KCS
- 製造商:
- Texas Instruments
當前暫無庫存，可於22/05/2024發貨，6 工作日送達。
已增加
單價（不含稅） 個 (以每管裝提供)
TWD156.50
(不含稅)
TWD164.32
(含稅)
| 單位 | Per unit |
| 14 - 24 | TWD156.50 |
| 26 + | TWD154.50 |
- RS庫存編號:
- 827-4919P
- 製造零件編號:
- CSD19536KCS
- 製造商:
- Texas Instruments
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
N-Channel NexFET™ Power MOSFET, Texas Instruments
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Texas Instruments
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 259 A |
| Maximum Drain Source Voltage | 100 V |
| Series | NexFET |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 3.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.2V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 10.67mm |
| Typical Gate Charge @ Vgs | 118 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Width | 4.7mm |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Height | 16.51mm |