Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

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可享批量折扣

小計（8 卷，共 100 件）**. Quantities below 150 on continuous strip

TWD8,640.00

(不含稅)

TWD9,072.00

(含稅)

75700 現貨庫存，可於6工作日發貨。*

* 交貨日期可能會根據您選擇的數量和交貨地址而變更。

單位	每單位
800 +	TWD10.50

** 參考價格

屬性	值
Channel Type	N, P
Maximum Continuous Drain Current	2.1 A, 3.4 A
Maximum Drain Source Voltage	30 V
Package Type	TSOT-26
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	100 mΩ, 140 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Maximum Power Dissipation	1.27 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Width	1.6mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	7 nC @ 10 V, 9 nC @ 10 V
Length	2.9mm
Transistor Material	Si
Number of Elements per Chip	2
Height	0.9mm
Minimum Operating Temperature	-55 °C