N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXYS IXFK120N30P3

RS庫存編號:: 802-4394P
製造零件編號:: IXFK120N30P3
製造商:: IXYS

N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXYS IXFK120N30P3

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24 現貨庫存，可於6工作日發貨。

單價（不含稅）個 (以每管裝提供)

TWD569.00

(不含稅)

TWD597.45

單位	每單位
7 - 12	TWD569.00
13 +	TWD561.00

RS庫存編號:: 802-4394P
製造零件編號:: IXFK120N30P3
製造商:: IXYS

IXFK120N30P3, IXFX120N30P3, Polar3 HiPerFET, Power MOSFETs, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Diode
ESD Control Selection Guide V1

屬性	值
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	300 V
Package Type	TO-264
Series	HiperFET, Polar3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	27 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.13 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	150 nC @ 10 V
Length	19.96mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Width	5.13mm
Height	26.16mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXYS IXFK120N30P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series