N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXYS IXFB110N60P3

RS庫存編號:: 802-4344P
製造零件編號:: IXFB110N60P3
製造商:: IXYS

N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXYS IXFB110N60P3

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單價（不含稅）個 (以每管裝提供)

TWD739.00

(不含稅)

TWD775.95

單位	每單位
7 - 12	TWD739.00
13 +	TWD728.00

RS庫存編號:: 802-4344P
製造零件編號:: IXFB110N60P3
製造商:: IXYS

IXFB110N60P3, Polar3 HiperFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

屬性	值
Channel Type	N
Maximum Continuous Drain Current	110 A
Maximum Drain Source Voltage	600 V
Series	HiperFET, Polar3
Package Type	PLUS264
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	56 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.89 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	20.29mm
Typical Gate Charge @ Vgs	245 nC @ 10 V
Width	5.31mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	26.59mm

N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXYS IXFB110N60P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series