N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXYS IXFX24N100Q3

RS庫存編號:: 801-1483P
製造零件編號:: IXFX24N100Q3
製造商:: IXYS

N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXYS IXFX24N100Q3

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當前暫無庫存，可於22/04/2025發貨，6 工作日送達。

單價（不含稅）個 (以每管裝提供)

TWD884.00

(不含稅)

TWD928.20

單位	每單位
1 +	TWD884.00

RS庫存編號:: 801-1483P
製造零件編號:: IXFX24N100Q3
製造商:: IXYS

產品概覽和技術數據資料表

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產品詳細資訊

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

規格

屬性	值
Channel Type	N
Maximum Continuous Drain Current	24 A
Maximum Drain Source Voltage	1000 V
Package Type	PLUS247
Series	HiperFET, Q3-Class
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	440 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	6.5V
Maximum Power Dissipation	1 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	5.21mm
Typical Gate Charge @ Vgs	140 nC @ 10 V
Length	16.13mm
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	21.34mm