N-Channel MOSFET, 18 A, 1000 V, 3-Pin ISOPLUS247 IXYS IXFR24N100Q3

RS庫存編號:: 801-1433P
製造零件編號:: IXFR24N100Q3
製造商:: IXYS

N-Channel MOSFET, 18 A, 1000 V, 3-Pin ISOPLUS247 IXYS IXFR24N100Q3

此圖片僅供參考，請參閲產品詳細資訊及規格

當前暫無庫存，可於07/02/2025發貨，6 工作日送達。

單價（不含稅）個 (以每管裝提供)

TWD988.00

(不含稅)

TWD1,037.40

單位	每單位
8 - 14	TWD988.00
15 +	TWD974.00

RS庫存編號:: 801-1433P
製造零件編號:: IXFR24N100Q3
製造商:: IXYS

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

規格

屬性	值
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	1000 V
Series	HiperFET, Q3-Class
Package Type	ISOPLUS247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	490 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	6.5V
Maximum Power Dissipation	500 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	140 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Width	5.21mm
Length	16.13mm
Maximum Operating Temperature	+150 °C
Height	21.34mm
Minimum Operating Temperature	-55 °C