N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXYS IXFB82N60Q3

RS庫存編號:: 801-1370P
製造零件編號:: IXFB82N60Q3
製造商:: IXYS

N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXYS IXFB82N60Q3

此圖片僅供參考，請參閲產品詳細資訊及規格

當前暫無庫存，可於22/04/2025發貨，6 工作日送達。

單價（不含稅）個 (以每管裝提供)

TWD1,393.00

(不含稅)

TWD1,462.65

單位	每單位
7 - 12	TWD1,393.00
13 +	TWD1,372.00

RS庫存編號:: 801-1370P
製造零件編號:: IXFB82N60Q3
製造商:: IXYS

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

規格

屬性	值
Channel Type	N
Maximum Continuous Drain Current	82 A
Maximum Drain Source Voltage	600 V
Package Type	PLUS264
Series	HiperFET, Q3-Class
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	75 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	6.5V
Maximum Power Dissipation	1.56 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	20.29mm
Typical Gate Charge @ Vgs	275 nC @ 10 V
Width	5.31mm
Minimum Operating Temperature	-55 °C
Height	26.59mm