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MOSFETs
P-Channel MOSFET, 120 A, 60 V, 4-Pin IPAK Renesas 2SJ601-AZ
RS庫存編號:
772-5258
製造零件編號:
2SJ601-AZ
製造商:
Renesas Electronics
此圖片僅供參考,請參閲產品詳細資訊及規格
查看所有MOSFETs
此產品已停售
RS庫存編號:
772-5258
製造零件編號:
2SJ601-AZ
製造商:
Renesas Electronics
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
規格
Silicon P Channel MOSFET 2SJ601 Data Sheet
Package Difference between 2S*****-AZ and 2S*****-Z-AZ
ESD Control Selection Guide V1
Group 6
3D
登入下載 CAD 模型
相容
符合聲明
P-Channel MOSFET, Renesas Electronics (NEC)
MOSFET Transistors, Renesas Electronics (NEC)
屬性
值
Channel Type
P
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
46 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
65 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
63 nC @ 10 V
Length
6.5mm
Maximum Operating Temperature
+150 °C
Width
7mm
Number of Elements per Chip
1
Transistor Material
Si
Height
2.3mm