2SJ601-AZ P-Channel MOSFET, 120 A, 60 V, 4-Pin IPAK Renesas

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P-Channel MOSFET, Renesas Electronics (NEC)

MOSFET Transistors, Renesas Electronics (NEC)

規格
屬性
Channel Type P
Maximum Continuous Drain Current 120 A
Maximum Drain Source Voltage 60 V
Package Type IPAK (TO-251)
Mounting Type Through Hole
Pin Count 4
Maximum Drain Source Resistance 46 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.5V
Maximum Power Dissipation 65 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Length 6.5mm
Typical Gate Charge @ Vgs 63 nC @ 10 V
Width 7mm
Transistor Material Si
Maximum Operating Temperature +150 °C
Height 2.3mm
45 現貨庫存,可於4工作日發貨。
單價(不含稅) /個 (每包:5個)
TWD 40.20
(不含稅)
TWD 42.20
(含稅)
單位
Per unit
Per Pack*
5 - 20
TWD40.20
TWD201.00
25 - 95
TWD39.80
TWD199.00
100 - 245
TWD39.40
TWD197.00
250 - 495
TWD38.80
TWD194.00
500 +
TWD38.40
TWD192.00
* 參考價格
包裝方式: