N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-220 STMicroelectronics STP16N65M5
- RS庫存編號:
- 687-5298
- 製造零件編號:
- STP16N65M5
- 製造商:
- STMicroelectronics
當前暫無庫存，可於19/05/2025發貨，6 工作日送達。
已增加
單價（不含稅） 個 (每包:2個)
TWD99.50
(不含稅)
TWD104.48
(含稅)
| 單位 | Per unit | Per Pack* |
| 2 - 12 | TWD99.50 | TWD199.00 |
| 14 - 24 | TWD97.00 | TWD194.00 |
| 26 + | TWD95.50 | TWD191.00 |
| * 參考價格 | ||
- RS庫存編號:
- 687-5298
- 製造零件編號:
- STP16N65M5
- 製造商:
- STMicroelectronics
法例與合規
產品詳細資訊
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, STMicroelectronics
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 12 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-220 |
| Series | MDmesh M5 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 299 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 90 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | +25 V |
| Width | 4.6mm |
| Maximum Operating Temperature | +150 °C |
| Length | 10.4mm |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 31 nC @ 10 V |
| Height | 9.15mm |
| Minimum Operating Temperature | -55 °C |