- RS庫存編號:
- 264-8928
- 製造零件編號:
- TP2104K1-G
- 製造商:
- Microchip
當前暫無庫存,可於17/09/2024發貨,6 工作日送達。
已增加
單價(不含稅) 個 (在毎卷:3000)
TWD19.20
(不含稅)
TWD20.16
(含稅)
單位 | Per unit | Per Reel* |
3000 + | TWD19.20 | TWD57,600.00 |
* 參考價格 |
- RS庫存編號:
- 264-8928
- 製造零件編號:
- TP2104K1-G
- 製造商:
- Microchip
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
Free from secondary breakdown
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
屬性 | 值 |
---|---|
Channel Type | P |
Maximum Drain Source Voltage | 40 V |
Package Type | SOT-23 |
Mounting Type | Through Hole |