N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN 3 x 3 Infineon IQE008N03LM5CGATMA1

The Infineon OptiMOSTM 5 30V PQFN 3.3x3.3 Source-Down features 30 V and low RDS(on) of 0.85 mOhm. It offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level.

Improved PCB losses
Enabling highest power density and performance

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