STMicroelectronics Single 1 N-Channel, 7 A, 600 V Enhancement, 8-Pin PowerFLAT (5 x 6) HV STL13N60M6
- RS庫存編號:
- 192-4849P
- 製造零件編號:
- STL13N60M6
- 製造商:
- STMicroelectronics
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- RS庫存編號:
- 192-4849P
- 製造零件編號:
- STL13N60M6
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Transistor Configuration | Single | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Maximum Continuous Drain Current (Id) | 7 A | |
| Maximum Drain Source Voltage (Vds) | 600 V | |
| Channel Mode | Enhancement | |
| Pin Count | 8 | |
| Package Type | PowerFLAT (5 x 6) HV | |
| Forward Voltage (Vf) | 1.6 V | |
| Height | 950 μm | |
| Length | 6 mm | |
| Maximum Drain Source Resistance (Rds) | 415 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 25 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 52 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Width | 5 mm | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Transistor Configuration Single | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Maximum Continuous Drain Current (Id) 7 A | ||
Maximum Drain Source Voltage (Vds) 600 V | ||
Channel Mode Enhancement | ||
Pin Count 8 | ||
Package Type PowerFLAT (5 x 6) HV | ||
Forward Voltage (Vf) 1.6 V | ||
Height 950 μm | ||
Length 6 mm | ||
Maximum Drain Source Resistance (Rds) 415 mΩ | ||
Maximum Gate Source Voltage (Vgs) 25 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 52 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Width 5 mm | ||
- COO (Country of Origin):
- CN
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
Zener-protected
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