MOSFET Vishay SIHP25N50E-GE3

The Vishay through-hole mount N-channel TO-220AB-3 MOSFET is a new age product with a drain-source voltage of 500V and a maximum gate-source voltage of 30V. It has a drain-source resistance of 145mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 250W and continuous drain current of 26A. It has a driving voltage of 10V. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Low figure-of-merit (FOM): Ron x Qg
• Low gate charge (Qg)
• Low input capacitance (Ciss)
• Operating temperature ranges between -55°C and 150°C
• Reduced switching and conduction losses

• Hard switched topologies
• PC silver box/ATX power supplies
• Power factor correction power supplies (PFC)
• Switch mode power supplies (SMPS)
• Two-stage LED lighting

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• UIS tested

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