N-Channel MOSFET, 2.8 A, 800 V, 3-Pin TO-220 Vishay Siliconix SIHA2N80E-GE3
- RS庫存編號:
- 178-3907
- 製造零件編號:
- SIHA2N80E-GE3
- 製造商:
- Vishay Siliconix
此產品已停售
- RS庫存編號:
- 178-3907
- 製造零件編號:
- SIHA2N80E-GE3
- 製造商:
- Vishay Siliconix
產品概覽和技術數據資料表
法例與合規
不適用
- COO (Country of Origin):
- CN
產品詳細資訊
FEATURES
Low figure-of-merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Low figure-of-merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 2.8 A |
| Maximum Drain Source Voltage | 800 V |
| Series | E-Series |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.75 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 29 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Maximum Operating Temperature | +150 °C |
| Length | 10.3mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 9.8 nC @ 10 V |
| Width | 4.7mm |
| Number of Elements per Chip | 1 |
| Height | 15.3mm |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |