P-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRFD9120PBF
- RS庫存編號:
- 178-0917
- 製造零件編號:
- IRFD9120PBF
- 製造商:
- Vishay
此產品暫時不接受預訂。
抱歉，此產品暫無現貨，目前也不接受預訂。
已增加
單價（不含稅） 毎管：100 個
TWD32.20
(不含稅)
TWD33.81
(含稅)
| 單位 | Per unit | Per Tube* |
| 100 - 400 | TWD32.20 | TWD3,220.00 |
| 500 + | TWD26.60 | TWD2,660.00 |
| * 參考價格 | ||
- RS庫存編號:
- 178-0917
- 製造零件編號:
- IRFD9120PBF
- 製造商:
- Vishay
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centres.
Dynamic dV/dt rating
Repetitive avalanche rated
Repetitive avalanche rated
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
規格
屬性 | 值 |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 1 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | HVMDIP |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 600 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 1.3 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 5mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Width | 6.29mm |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V |
| Height | 3.37mm |
| Minimum Operating Temperature | -55 °C |