N-Channel MOSFET, 136 A, 100 V, 3-Pin D2PAK Toshiba TK65G10N1

Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)

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